Notes on the behavior of silicon sensors

The depletion voltage for a silicon sensor is given in terms of the effective number of dopant sites in the bulk material by:

Vdep=(Thickness2*Neff*q)/2e.

For a 300 micron thick sensor this is approximately Vdep = 7 x 10-11*V cm3 * Neff cm-3.

For Neff = 1 x 1012 cm-3 (~5 kOhms