Notes on the behavior of silicon sensors

The depletion voltage for a silicon sensor is given in terms of the effective number of dopant sites in the bulk material by:

V_dep=(Thickness²*N_eff*q)/2e.

For a 300 micron thick sensor this is approximately V_dep = 7 x 10^-11*V cm³ * N_eff cm^-3.

For N_eff = 1 x 10¹² cm^-3 (~5 kOhms